Abstract: We present a methodology to study the impact of spatial pattem dependent variation on circuit performance and implement the technique in a CAD framework. We investigate the effects of interconnect CMP and poly CD device variation on inter-connect delay and clock skew in both aluminum and copper inter-connect technology. Our results indicate that interconnect CMP variation strongly affects interconnect delay, while poly CD varia-tion has a large impact on clock skew in a 1 GHz design. Given this circuit impact, CAD tools in the future must account for such systematic within-die variations.
statistical metrology, interconnect, CMP A statistical metrology framework is used to identify syste...
Abstract — As the device geometries are shrinking, the impact of crosstalk effects increases, which ...
[[abstract]]A statistical metrology framework is used to identify systematic and random sources of i...
As technology scales, understanding semiconductor manufacturing variation becomes essential to effec...
Global interconnect reliability is becoming a bigger issue as we scale down further into the submicr...
Pattern dependent interconnect physical parameter variations are studied based on a test chip in 65 ...
Non-uniform temperature profiles along global interconnect lines in high-performance ICs can signifi...
Increased variation in CMOS processes due to scaling results in greater reliance on accurate variati...
In this paper we address both empirically and theoretically the impact of an advanced manufacturing ...
Within-die spatial correlation of device parameter values caused by manufacturing variations [1] has...
As semiconductor technology advances into the nano-scale era and more functional blocks are added in...
Variability of interconnects is a major problem. Starting with 32nm technology, double patterning li...
In this study, structural variations and overlay errors caused by multiple patterning lithography te...
In this work, we analyze the impact of local process variations on the clock skew of VLSI circuits d...
In this work, we analyze the impact of local process variations on the clock skew of VLSI circuits d...
statistical metrology, interconnect, CMP A statistical metrology framework is used to identify syste...
Abstract — As the device geometries are shrinking, the impact of crosstalk effects increases, which ...
[[abstract]]A statistical metrology framework is used to identify systematic and random sources of i...
As technology scales, understanding semiconductor manufacturing variation becomes essential to effec...
Global interconnect reliability is becoming a bigger issue as we scale down further into the submicr...
Pattern dependent interconnect physical parameter variations are studied based on a test chip in 65 ...
Non-uniform temperature profiles along global interconnect lines in high-performance ICs can signifi...
Increased variation in CMOS processes due to scaling results in greater reliance on accurate variati...
In this paper we address both empirically and theoretically the impact of an advanced manufacturing ...
Within-die spatial correlation of device parameter values caused by manufacturing variations [1] has...
As semiconductor technology advances into the nano-scale era and more functional blocks are added in...
Variability of interconnects is a major problem. Starting with 32nm technology, double patterning li...
In this study, structural variations and overlay errors caused by multiple patterning lithography te...
In this work, we analyze the impact of local process variations on the clock skew of VLSI circuits d...
In this work, we analyze the impact of local process variations on the clock skew of VLSI circuits d...
statistical metrology, interconnect, CMP A statistical metrology framework is used to identify syste...
Abstract — As the device geometries are shrinking, the impact of crosstalk effects increases, which ...
[[abstract]]A statistical metrology framework is used to identify systematic and random sources of i...